InGaAs PV device development for TPV power systems

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National Aeronautics and Space Administration, National Technical Information Service, distributor , [Washington, DC], [Springfield, Va
StatementDavid M. Wilt ... [et al.].
SeriesNASA technical memorandum -- 106718.
ContributionsWilt, David M., United States. National Aeronautics and Space Administration.
The Physical Object
FormatMicroform
Pagination1 v.
ID Numbers
Open LibraryOL17790302M
OCLC/WorldCa32271013

InGaAs PV device development for TPV power systems. InGaAs PV device development for TPV power systems. January We go on to consider the management of the very high currents generated in both concentrator TPV and PV systems.

InGaAs PV Device Development for TPV Power Systems 2_33/ /5/_f_ David M. Wilt National Aeronautics and Space Administration Lewis Research Center Cleveland, Ohio Navid S.

Fatemi and Richard W. Hoffman, Jr. Essential Research, Inc. Cleveland, Ohio Phillip P. Jenkins and David Scheiman NYMA, Inc. Engineering Services Division Brook Park, Ohio. InGaAs PV device development for TPV power systems.

Article However, TPV-systems using Si-cells may still be an interesting option, e.g. for self-powering heating units, i.e.

in InGaAs PV device development for TPV power systems book, where. Get this from a library. InGaAs PV device development for TPV power systems.

[David M Wilt; United States.

Description InGaAs PV device development for TPV power systems PDF

National Aeronautics and Space Administration.;]. Thermophotovoltaic (TPV) energy conversion is a direct conversion process from heat to electricity via photons.A basic thermophotovoltaic system consists of a thermal emitter and a photovoltaic diode cell.

The temperature of the thermal emitter varies between different systems from about °C to about °C, although in principle TPV devices can extract energy from any emitter with.

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from eV to eV on Indium Phosphide (InP) substrates.

Reported efficiencies have been as high as percent (AMO) for the lattice matched eV devices. The eV cell demonstrated percent efficiency under a K blackbody with a projected efficiency of percent. Indium Gallium Arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from eV to eV on Indium Phosphide (InP) substrates.

Reported efficiencies have been as high as % (AM0) for the lattice matched eV devices. The eV cell demonstrated % efficiency under a °K blackbody with a projected efficiency of %. The development of indium gallium arsenide (E(sub g)= eV) photovoltaic devices for thermophotovoltaic power generation is described.

A device designed for. adshelp[at] The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative Agreement NNX16AC86A.

In this paper, we present an InGaAs/InPAs double heterostructure TPV cell that has achieved a power conversion efficiency of % and a power density of W/cm2 for a graphite. Optimization of TPV Cells Power Conversion InGaAs TPV devices are the best for NASA applications Bandgap at eV ( micron) different PV material systems 0 1 2 Overview and Status of Radioisotope Thermophotovoltaic (RTPV) Power System Development for Space.

Lowe, and G. Landis, “InGaAs PV device development for TPV power systems,” in AIP 1st NREL Conf. on TPV Generation of Elec- tricity,pp. – InGaAs PV device development for TPV power systems. By Navid S. Fatemi, David M. Wilt, Roland A. Lowe, Jr.

Details InGaAs PV device development for TPV power systems EPUB

Richard W. Hoffman, David J. Brinker, David Scheiman, Phillip P. Jenkins and Donald Chubb. Abstract. Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from eV to on Indium phosphide. InGaAs PV Device Development for TPV Power Systems.

By Jr. Richard W. Hoffman, Roland Lowe, David M. Wilt, Phillip P. Jenkins, David Scheiman, Geoffrey A. Landis and Navid S. Fatemi. Abstract. Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from eV to eV on Indium Phosphide (InP.

For low-temperature radiators, both power density and efficiency are equally important in designing an effective TPV system. Comparisons of 1 cm×1 cm, eV InGaAs and InGaAsSb TPV devices are.

InGaAs PV Device Development for TPV Power Systems. By David Scheiman, Roland Lowe, Phillip P. Jenkins, Jr. Richard W. Hoffman, Donald Chubb, David J. Brinker, David M. Wilt and Navid S. Fatemi. Abstract. lndium Gallium Arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from eV to eV on Indium Phosphide.

The total absorbed power in the photovoltaic device is then P absorbed (T s) = P incident − P reflected = A F eff ∫ 0 ∞ ε eff (E) (1 − R (E)) b s (E, T s) ⋅ E d E.

[5] With 1) emissivity calibration, 2) view factor calibration, and 3) temperature calibration, we can now accurately characterize the device thermophotovoltaic efficiency.

InGaAs PV DEVICE DEVELOPMENT FOR TPV POWER SYSTEMS David M. Wilt, Navid S. Fatemi, and Richard W. Hoffman, Jr. Essential Research, Inc. Cleveland, Ohio Phillip P. Jenkins, David J.

Brinker, and David Scheiman NYMA, Inc. Brook Park, Ohio Roland Lowe Kent State University Kent, Ohio and Donald Chubb NASA Lewis Research Center Cleveland, Ohio SUMMARY. PV conversion, the heat source is significantly closer to the PV cell, resulting in photon flux and power density that are orders of magnitude higher.

However, due to the much lower tem-peratures achievable in practical TPV systems (T. InGaAs cells have the advantages of low absorption bandgap, high efficiency and great stability, which are widely used in thermophotovoltaic(TPV) devices.

In this paper, the material growth, device fabrication and system integration of eV In Ga As (lattice matched to InP substrate) and eV InGaAs (lattice mismatched to. Abstract: This paper describes the status of development of an indium gallium arsenide (InGaAs) monolithically-interconnected module (MIM) for thermophotovoltaic (TPV) energy conversion applications.

The MIM structure features series interconnected InGaAs sub-cells on an insulating indium phosphide (InP) substrate, with a rear-surface infrared (IR) reflector. With advances in thermophotovoltaic (TPV) cells enabling recycling of sub-bandgap photons, a key barrier to reaching high prototype efficiencies has become radiative losses to parasitic high-emissivity regions, such as heavily doped contact regions, defects in coatings, and inactive areas.

Here, we examine the impact of such radiative losses on the performance of various candidate cell. However, TPV-systems using Si-cells may still be an interesting option, e.g. for self-powering heating units, i.e. in systems, where the required electricity share is only a few percents of the thermal load.

D.M. Wilt et al., InGaAs pv device development for TPV power systems, in: 1st NREL Conf. on Thermophotovoltaic, Generation of. @article{osti_, title = {Multijunction InGaAs thermophotovoltaic devices}, author = {Fatemi, N S and Jenkins, P P and Weizer, V G and Wilt, D M and Murray, C S}, abstractNote = {A monolithic interconnected module (MIM) structure has been developed for thermophotovoltaic (TPV) applications.

The MIM consists of many individual InGaAs cells series-connected on a single semi-insulating (S.I. (2) Fabrication of one-chip near-field TPV device.

(3) Simulation of mechanical oscillation modes of the suspended emitter. (4) Characterization of InGaAs PV cells under solar illumination. (5) Estimation of emitter temperature and gap size and their uncertainties. (6) Numerical simulation of heating power and temperature distribution.

A simple model of TPV solar energy conversion system is used here.

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An intermediate (small) blackbody plane disk absorber/emitter A (temperature T A, radius r A), placed in the focus of a (primary) lens or mirror, receives radiation from the Sun (temperature T p) with a solid angle of incidence Ω inc and from the surroundings with the solid angle 4π−Ω inc.

The main differences between TPV and conventional solar cells are the lower temperature sources found in a TPV system and the much closer proximity of cell to the source (~ 1–10 cm in TPV compared to × m to the Sun), resulting in much higher power densities (5−60 compared with Wcm − 2).

These power densities are comparable. High performance, lattice-mismatched p/n InGaAs/lnP monolithic interconnected module (MIM) structures were developed for thermophotovoltaic (TPV) applications.

A MIM device consists of several individual InGaAs photovoltaic (PV) cells series-connected on a single semi-insulating (S.I.) InP substrate. Using the more efficient InGaAs cells, the system can expect to triple the figure of merits of the radioisotope thermoelectric generator, promising to reach ∼ 18 % and 21 W / kg, respectively.

With a high performance device, the results of this work can lead to a functional prototype for further research focusing on manufacturability and.

An experimental and theoretical investigation of thermophotovoltaic (TPV) energy conversion using silicon photovoltaic cells has been performed. These cells are intended for use in a proposed solar-electric system that, in concept, uses concentrating mirrors focused on a TPV converter that operates at high power density and high efficiency.The integration of photovoltaic (PV) systems to electricity networks is covered at the top level in the standard, which groups the issues into two main categories: safety and power quality.

Safety of personnel and protection of equipment are the most important issues concerning a grid-connected PV. GaSb, InGaAsSb and InGaAs cells are three types of low bandgap TPV devices that presently are of considerable interest.

Fraas et al.,Fraas et al., explored the integration of GaSb TPV cells with a gas-fired space heater and radiant tube burner for use in combined heat and power systems.